IRF820

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Harris Corporation

2.5A, 500V, 3.000 OHM, N-CHANNEL

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Active

Harris Corporation

2.5A, 500V, 3.000 OHM, N-CHANNEL

Technical Specifications

Parameters and characteristics for this part

Specification	IRF820

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	315 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	80 W
Rds On (Max) @ Id, Vgs	3 Ohm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Technology	Supplier Device Package	Vgs(th) (Max) @ Id	Vgs (Max)	Drain to Source Voltage (Vdss)
Harris Corporation IRF820	N-Channel	4 A	TO-220-3	17 nC	150 °C	Through Hole	10 V	3 Ohm	315 pF	80 W	MOSFET (Metal Oxide)	TO-220AB	4 V	30 V	500 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	503	$ 0.60

General part information

N-Channel 500 V 4A (Tc) 80W (Tc) Through Hole TO-220AB

Technical documentation and resources

No documents available