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CSD16301Q2 Series

25-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 29 mOhm

Manufacturer: Texas Instruments
Link to Manufacturer Page: https://www.ti.com/

Catalog

25-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 29 mOhm

PartDrain to Source Voltage (Vdss)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsPackage / CaseMounting TypeFET TypeVgs(th) (Max) @ IdVgs (Max)Input Capacitance (Ciss) (Max) @ Vds [Max]Power Dissipation (Max) [Max]Current - Continuous Drain (Id) @ 25°CSupplier Device PackageTechnologyDrive Voltage (Max Rds On, Min Rds On)Operating Temperature [Max]Operating Temperature [Min]
Texas Instruments
CSD16301Q2
25 V
24 mOhm
2.8 nC
6-SMD, Flat Leads
Surface Mount
N-Channel
1.55 V
-8 V, 10 V
340 pF
2.3 W
5 A
6-SON
MOSFET (Metal Oxide)
3 V, 8 V
150 °C
-55 °C

Key Features

Ultra-low Qg and QgdLow thermal resistanceLead-free terminal platingRoHS compliantHalogen freeSON 2mm × 2mm plastic packageUltra-low Qg and QgdLow thermal resistanceLead-free terminal platingRoHS compliantHalogen freeSON 2mm × 2mm plastic package

Description

AI
This 25V, 19mΩ, 2mm × 2mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and load management applications. The 2mm × 2mm SON package offers excellent thermal performance for the size of the package. . . This 25V, 19mΩ, 2mm × 2mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion and load management applications. The 2mm × 2mm SON package offers excellent thermal performance for the size of the package. . .