MOSFET N-CH 200V 35.8A TO252AA
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Supplier Device Package | Vgs (Max) | Package / Case | FET Type | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | -55 °C | 175 ░C | 37.5 mOhm | 32 nC | 35.8 A | Surface Mount | 10 V | 7.5 V | TO-252AA | 20 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | N-Channel | 125 W | 1172 pF | 200 V | 4 V | MOSFET (Metal Oxide) |