CSD19538Q2 Series

100-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 59 mOhm

Catalog

100-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 59 mOhm

Part	Current - Continuous Drain (Id) (Tc)	Package Width	Package Name	Package Length	Current - Continuous Drain (Id) (Ta)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Technology	Rds On (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max)	Mounting Type	Package / Case	Gate Charge (Max)
Texas Instruments CSD19538Q2R	13.1 A	2 mm	6-WSON	2 mm	4.6 A	6 V	10 V	MOSFET (Metal Oxide)	59 mOhm	100 V	2.5 W 20.2 W	N-Channel	-55 °C	150 °C	3.8 V	20 V	454 pF	Surface Mount	6-WDFN Exposed Pad	5.6 nC

Catalog

100-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 59 mOhm

Description

This 100V, 49mΩ, SON 2mm × 2mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications. This 100V, 49mΩ, SON 2mm × 2mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.