CSD25202W15 Series
Manufacturer: Texas Instruments
Beta
⌘K
-20-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE WLP 1.5 MM X 1.5 MM, 26 MOHM, GATE ESD PROTECTION
| Part | Input Capacitance (Ciss) (Max) | Vgs (Max) | Vgs(th) (Max) | Power Dissipation (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Mounting Type | Rds On (Max) | FET Type | Operating Temperature (Min) | Operating Temperature (Max) | Package / Case | Gate Charge (Max) | Technology | Package Name | Current - Continuous Drain (Id) (Ta) | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments | 1010 pF | -6 V | 1.05 V | 500 mW | 4.5 V | 1.8 V | Surface Mount | 26 mOhm | P-Channel | -55 °C | 150 °C | 9-UFBGA DSBGA | 7.5 nC | MOSFET (Metal Oxide) | 9-DSBGA | 4 A | 20 V |
Texas Instruments | 1010 pF | -6 V | 1.05 V | 500 mW | 4.5 V | 1.8 V | Surface Mount | 26 mOhm | P-Channel | -55 °C | 150 °C | 9-UFBGA DSBGA | 7.5 nC | MOSFET (Metal Oxide) | 9-DSBGA | 4 A | 20 V |