Beta
⌘K
POWER MOSFET, P CHANNEL, 55 V, 11 A, 0.175 OHM, TO-251, THROUGH HOLE
| Part | Power Dissipation (Max) | Package / Case | Rds On (Max) @ Id, Vgs | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Mounting Type | Technology | Vgs (Max) | Vgs(th) (Max) @ Id | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 38 W | IPAK TO-251-3 Short Leads TO-251AA | 175 mOhm | P-Channel | 10 V | 55 V | Through Hole | MOSFET (Metal Oxide) | 20 V | 4 V | IPAK (TO-251AA) | 11 A | 350 pF | 19 nC | -55 °C | 150 °C |