IRFU9024NPBF

Active

Infineon Technologies

POWER MOSFET, P CHANNEL, 55 V, 11 A, 0.175 OHM, TO-251, THROUGH HOLE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet IR Part Numbering System

IRFU9024NPBF

Active

Infineon Technologies

POWER MOSFET, P CHANNEL, 55 V, 11 A, 0.175 OHM, TO-251, THROUGH HOLE

Deep-Dive with AI

DocumentsDatasheet IR Part Numbering System

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRFU9024NPBF

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	350 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	38 W
Rds On (Max) @ Id, Vgs	175 mOhm
Supplier Device Package	IPAK (TO-251AA)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IRFU9024 Series

Part	Power Dissipation (Max)	Package / Case	Rds On (Max) @ Id, Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Mounting Type	Technology	Vgs (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]
Infineon Technologies IRFU9024NPBF	38 W	IPAK TO-251-3 Short Leads TO-251AA	175 mOhm	P-Channel	10 V	55 V	Through Hole	MOSFET (Metal Oxide)	20 V	4 V	IPAK (TO-251AA)	11 A	350 pF	19 nC	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 0.68
		75	$ 0.53
		150	$ 0.47
		525	$ 0.40
		1050	$ 0.34
		2025	$ 0.33
		5025	$ 0.31
		10050	$ 0.33
Newark	Each	1	$ 0.68
		10	$ 0.61
		100	$ 0.55
		500	$ 0.51
		1000	$ 0.47
		2500	$ 0.42
		12000	$ 0.39

Description

General part information

IRFU9024 Series

The IRFU9024NPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapour phase, infrared or wave soldering techniques.

Documents

Technical documentation and resources