CSD17578 Series

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 9.3 mOhm

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 9.3 mOhm

Part	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Ta)	Input Capacitance (Ciss) (Max)	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Package Width	Package Name	Package Length	Rds On (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	FET Type	Package / Case	Vgs (Max)	Power Dissipation (Max)	Gate Charge (Max)	Mounting Type
Texas Instruments CSD17578Q5A	-55 °C	150 °C	25 A	1510 pF	MOSFET (Metal Oxide)	30 V	1.9 V	6 mm	8-VSONP	5 mm	6.9 mOhm	10 V	4.5 V	N-Channel	8-PowerTDFN	20 V	3.1 W 42 W	22.3 nC	Surface Mount
Texas Instruments CSD17578Q3A	-55 °C	150 °C	20 A	1590 pF	MOSFET (Metal Oxide)	30 V	1.9 V	3.3 mm	8-VSONP	3 mm	7.3 mOhm	10 V	4.5 V	N-Channel	8-PowerVDFN	20 V	3.2 W 37 W	22.2 nC 22.2 nC	Surface Mount
Texas Instruments CSD17578Q3AT	-55 °C	150 °C	20 A	1590 pF	MOSFET (Metal Oxide)	30 V	1.9 V	3.3 mm	8-VSONP	3 mm	7.3 mOhm	10 V	4.5 V	N-Channel	8-PowerVDFN	20 V	3.2 W 37 W	22.2 nC 22.2 nC	Surface Mount
Texas Instruments CSD17578Q5AT	-55 °C	150 °C	25 A	1510 pF	MOSFET (Metal Oxide)	30 V	1.9 V	6 mm	8-VSONP	5 mm	6.9 mOhm	10 V	4.5 V	N-Channel	8-PowerTDFN	20 V	3.1 W 42 W	22.3 nC	Surface Mount

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 9.3 mOhm

Description

This 30 V, 6.3 mΩ, SON 3.3 mm × 3.3 mm NexFET power MOSFET is designed to minimize losses in power conversion applications. This 30 V, 6.3 mΩ, SON 3.3 mm × 3.3 mm NexFET power MOSFET is designed to minimize losses in power conversion applications.