DIODE GEN PURP 100V 4A DO214AB
| Part | Reverse Recovery Time (trr) | Technology | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Reverse Leakage @ Vr | Package / Case | Capacitance @ Vr, F | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Speed | Speed | Current - Average Rectified (Io) | Supplier Device Package | Mounting Type | Voltage - Forward (Vf) (Max) @ If [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | 1500 ns | Standard | 100 V | 100 µA | DO-214AB SMC | 60 pF | 150 °C | -55 °C | Standard Recovery >500ns | 200 mA | 4 A | DO-214AB (SMC) | Surface Mount | |
Taiwan Semiconductor Corporation | Standard | 100 V | 10 µA | DO-214AB SMC | 60 pF | 150 °C | -55 °C | 200 mA 500 ns | 4 A | DO-214AB (SMC) | Surface Mount | 1.15 V |