S4B R7G

Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 4A DO214AB

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Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 4A DO214AB

Technical Specifications

Parameters and characteristics for this part

Specification	S4B R7G

Capacitance @ Vr, F	60 pF
Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SMC, DO-214AB
Speed	200 mA, 500 ns
Supplier Device Package	DO-214AB (SMC)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.15 V

Part	Reverse Recovery Time (trr)	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Package / Case	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Speed	Current - Average Rectified (Io)	Supplier Device Package	Mounting Type	Voltage - Forward (Vf) (Max) @ If [Max]
Taiwan Semiconductor Corporation S4B V6G	1500 ns	Standard	100 V	100 µA	DO-214AB SMC	60 pF	150 °C	-55 °C	Standard Recovery >500ns	200 mA	4 A	DO-214AB (SMC)	Surface Mount
Taiwan Semiconductor Corporation S4B R7G		Standard	100 V	10 µA	DO-214AB SMC	60 pF	150 °C	-55 °C		200 mA 500 ns	4 A	DO-214AB (SMC)	Surface Mount	1.15 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 100 V 4A Surface Mount DO-214AB (SMC)

Technical documentation and resources