Catalog
650V/Three level inverter/IGBT modules
Description
AI
undefined
650V/Three level inverter/IGBT modules
| Part | Package / Case | Current - Collector (Ic) (Max) | IGBT Type | Power - Max | Input | Mounting Type | Package Name | Current - Collector Cutoff (Max) | Vce(on) (Max) | Configuration | Operating Temperature (Min) | Operating Temperature (Max) | Voltage - Collector Emitter Breakdown (Max) | Input Capacitance (Cies) @ Vce |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology | D-3 Module | 580 A | Trench Field Stop | 2100 W | Standard | Chassis Mount | D3 | 750 µA | 2.1 V | Half Bridge | -40 °C | 150 °C | 1200 V | 29 nF |
Microchip Technology | D4 | 600 A | Trench Field Stop | 2250 W | Standard | Chassis Mount | D4 | 8 mA | 2.1 V | Single | -40 °C | 150 °C | 1200 V | 28 nF |
Microchip Technology | SP6 | 560 A | Trench Field Stop | 1785 W | Standard | Chassis Mount | SP6 | 750 µA | 2.1 V | Half Bridge | -40 °C | 150 °C | 1200 V | 28 nF |
Microchip Technology | SP6 | 560 A | Trench Field Stop | 1785 W | Standard | Chassis Mount | SP6 | 750 µA | 2.1 V | Common Source Dual | -40 °C | 150 °C | 1200 V | 28 nF |
Microchip Technology | ||||||||||||||
Microchip Technology | SP6 | 560 A | Trench Field Stop | 1785 W | Standard | Chassis Mount | SP6 | 750 µA | 2.1 V | Single | -40 °C | 150 °C | 1200 V | 28 nF |
Microchip Technology | D-3 Module | 500 A | Trench Field Stop | 1250 W | Standard | Chassis Mount | D3 | 500 µA | 1.9 V | Half Bridge | -40 °C | 175 °C | 600 V | 24 nF |
Microchip Technology | D-3 Module | 500 A | Trench Field Stop | 1250 W | Standard | Chassis Mount | D3 | 500 µA | 1.9 V | Single | -40 °C | 175 °C | 600 V | 24 nF |
Microchip Technology | SP6 | 560 A | Trench Field Stop | 1785 W | Standard | Chassis Mount | SP6 | 750 µA | 2.1 V | Single | -40 °C | 150 °C | 1200 V | 28 nF |
Microchip Technology | D4 | 800 A | Trench Field Stop | 2080 W | Standard | Chassis Mount | D4 | 1 mA | 2.4 V | Single | 1700 V | 33 nF |