CSD13201W10 Series

12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 34 mOhm

Catalog

12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 34 mOhm

Part	Vgs (Max)	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	FET Type	Package Width	Package Name	Package Length	Rds On (Max)	Technology	Gate Charge (Max)	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Ta)	Power Dissipation (Max)	Mounting Type
Texas Instruments CSD13201W10	8 V	4-UFBGA DSBGA	12 V	462 pF	N-Channel	1 mm	4-DSBGA	1 mm	34 mOhm	MOSFET (Metal Oxide)	2.9 nC	1.1 V	-55 °C	150 °C	4.5 V	1.8 V	1.6 A	1.2 W	Surface Mount

Catalog

12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 34 mOhm

Description

This 12-V, 26-mΩ, N-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. This 12-V, 26-mΩ, N-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile.