BQ77307 Series
Low-power protector for 2S to 7S with high accuracy cell voltage measurement
Manufacturer: Texas Instruments
Link to Manufacturer Page: https://www.ti.com/
Catalog
Low-power protector for 2S to 7S with high accuracy cell voltage measurement
| Part | Mounting Type | Function | Package / Case | Interface | Number of Cells [Max] [custom] | Number of Cells [Min] [custom] | Battery Chemistry | Fault Protection | Operating Temperature [Max] | Operating Temperature [Min] |
|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments BQ77307RGRR | Surface Mount | Battery Protection | 20-VFQFN Exposed Pad | I2C | 7 | 2 | Multi-Chemistry | Over Current, Over Temperature, Over/Under Voltage | 110 °C | -40 °C |
Key Features
• Primary or secondary voltage, current, and temperature protection for 2-series to 7-series cells with an autonomous recovery optionVoltage protection:Cell overvoltage (COV): 0 V–5.5 V in 1-mV steps, ±4-mV accuracyCell undervoltage (CUV): 0 V–5.5 V in 1-mV steps, ±4-mV accuracyCurrent protection:Short circuit in discharge (SCD): 10 mV–500 mV, varying stepsOvercurrent in charge (OCC): 3 mV–123 mV, 2-mV stepsOvercurrent in discharge 1 and 2 (OCD1 and OCD2): 4 mV–200 mV, 2-mV stepsTemperature protection using external NTC thermistor:Overtemperature in charge and discharge (OTC and OTD)Undertemperature in charge and discharge (UTC and UTD)Internal die overtemperatureIntegrated low-side drivers for NFET protection with an optional autonomous recoveryLow power operation:NORMAL mode, both FETs enabled: 8 µANORMAL mode, FETs disabled: 5 µASHUTDOWN Mode: < 1 µAHigh voltage tolerance of 45 V on cell connect and select additional pinsIntegrated one-time-programmable (OTP) memory for device settings, programmed by TIProgrammable interrupt for host processor, status information available through I 2C400-kHz I 2C serial communications with optional CRC supportProgrammable LDO for external system usage20-pin QFN 3.5 mm × 3.5 mm × 0.9 mm (RGR) packagePrimary or secondary voltage, current, and temperature protection for 2-series to 7-series cells with an autonomous recovery optionVoltage protection:Cell overvoltage (COV): 0 V–5.5 V in 1-mV steps, ±4-mV accuracyCell undervoltage (CUV): 0 V–5.5 V in 1-mV steps, ±4-mV accuracyCurrent protection:Short circuit in discharge (SCD): 10 mV–500 mV, varying stepsOvercurrent in charge (OCC): 3 mV–123 mV, 2-mV stepsOvercurrent in discharge 1 and 2 (OCD1 and OCD2): 4 mV–200 mV, 2-mV stepsTemperature protection using external NTC thermistor:Overtemperature in charge and discharge (OTC and OTD)Undertemperature in charge and discharge (UTC and UTD)Internal die overtemperatureIntegrated low-side drivers for NFET protection with an optional autonomous recoveryLow power operation:NORMAL mode, both FETs enabled: 8 µANORMAL mode, FETs disabled: 5 µASHUTDOWN Mode: < 1 µAHigh voltage tolerance of 45 V on cell connect and select additional pinsIntegrated one-time-programmable (OTP) memory for device settings, programmed by TIProgrammable interrupt for host processor, status information available through I 2C400-kHz I 2C serial communications with optional CRC supportProgrammable LDO for external system usage20-pin QFN 3.5 mm × 3.5 mm × 0.9 mm (RGR) package