CSD13385F5 Series
12-V, N channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 19 mOhm, gate ESD protection
Manufacturer: Texas Instruments
Link to Manufacturer Page: https://www.ti.com/
Catalog
12-V, N channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 19 mOhm, gate ESD protection
| Part | Vgs(th) (Max) @ Id [Max] | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Rds On (Max) @ Id, Vgs | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) [Max] | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD13385F5 | 1.2 V | 5 nC | 3-PICOSTAR | 19 mOhm | MOSFET (Metal Oxide) | 150 °C | -55 °C | Surface Mount | 500 mW | 1.8 V, 4.5 V | 674 pF | 12 V | 4.3 A | 8 V | N-Channel |
Key Features
• Low on resistanceLow Qgand QgdUltra-small footprint1.53 mm × 0.77 mmLow profile0.36-mm heightIntegrated ESD protection diodeRated > 4-kV HBMRated > 2-kV CDMLead and halogen freeRoHS compliantLow on resistanceLow Qgand QgdUltra-small footprint1.53 mm × 0.77 mmLow profile0.36-mm heightIntegrated ESD protection diodeRated > 4-kV HBMRated > 2-kV CDMLead and halogen freeRoHS compliant
Description
AI
This 12-V, 15-mΩ, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.
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This 12-V, 15-mΩ, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size.
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