CSD13385F5 Series

12-V, N channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 19 mOhm, gate ESD protection

Catalog

12-V, N channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 19 mOhm, gate ESD protection

Part	Power Dissipation (Max)	Package Name	Technology	Rds On (Max)	Current - Continuous Drain (Id) (Ta)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Mounting Type	FET Type	Input Capacitance (Ciss) (Max)	Vgs (Max)	Package / Case	Vgs(th) (Max)
Texas Instruments CSD13385F5	500 mW	3-PICOSTAR	MOSFET (Metal Oxide)	19 mOhm	4.3 A	-55 °C	150 °C	12 V	5 nC	4.5 V	1.8 V	Surface Mount	N-Channel	674 pF	8 V	3-SMD No Lead	1.2 V
Texas Instruments CSD13385F5T	500 mW	3-PICOSTAR	MOSFET (Metal Oxide)	19 mOhm	4.3 A	-55 °C	150 °C	12 V	5 nC	4.5 V	1.8 V	Surface Mount	N-Channel	674 pF	8 V	3-SMD No Lead	1.2 V

Catalog

12-V, N channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 19 mOhm, gate ESD protection

Description

This 12-V, 15-mΩ, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size. . . . . This 12-V, 15-mΩ, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a significant reduction in footprint size. . . . .