MOSFET P-CH 20V 8A 6DFN
| Part | Power Dissipation (Max) | Technology | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. | 2.8 W | MOSFET (Metal Oxide) | 8 A | Surface Mount | 18 nC | 32 mOhm | 1025 pF | 6-UDFN Exposed Pad | 1.5 V 4.5 V | 20 V | 900 mV | P-Channel | -55 °C | 150 °C | 6-DFN (2x2) | 8 V | |
Alpha & Omega Semiconductor Inc. | 2.8 W | MOSFET (Metal Oxide) | 8 A | Surface Mount | 11 mOhm | 1645 pF | 6-UDFN Exposed Pad | 1.2 V 2.5 V | 8 V | 750 mV | N-Channel | -55 °C | 150 °C | 6-DFN (2x2) | 5 V | 16 nC | |
Alpha & Omega Semiconductor Inc. | 2.8 W | MOSFET (Metal Oxide) | 8 A | Surface Mount | 18 nC | 12.5 mOhm | 1140 pF | 6-UDFN Exposed Pad | 1.5 V 4.5 V | 20 V | 1 V | N-Channel | -55 °C | 150 °C | 6-DFN (2x2) | 8 V |