DIODE GEN PURP 500MA SUB SMA
| Part | Package / Case | Reverse Recovery Time (trr) | Current - Average Rectified (Io) | Technology | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Voltage - Forward (Vf) (Max) @ If | Speed | Supplier Device Package | Voltage - DC Reverse (Vr) (Max) [Max] | Capacitance @ Vr, F | Current - Reverse Leakage @ Vr | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | DO-219AB | 500 ns | 500 mA | Standard | 150 °C | -55 °C | 1.3 V | 200 mA 500 ns | Sub SMA | 1000 V | 4 pF | 5 µA | Surface Mount |
Taiwan Semiconductor Corporation | DO-219AB | 500 ns | 500 mA | Standard | 150 °C | -55 °C | 1.3 V | 200 mA 500 ns | Sub SMA | 1000 V | 4 pF | 5 µA | Surface Mount |
Taiwan Semiconductor Corporation | DO-219AB | 500 ns | 500 mA | Standard | 150 °C | -55 °C | 1.3 V | 200 mA 500 ns | Sub SMA | 1000 V | 4 pF | 5 µA | Surface Mount |