RSFML

Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 500MA SUB SMA

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Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 500MA SUB SMA

Technical Specifications

Parameters and characteristics for this part

Specification	RSFML

Capacitance @ Vr, F	4 pF
Current - Average Rectified (Io)	500 mA
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-219AB
Reverse Recovery Time (trr)	500 ns
Speed	200 mA, 500 ns
Supplier Device Package	Sub SMA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Package / Case	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Speed	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Mounting Type
Taiwan Semiconductor Corporation RSFML RUG	DO-219AB	500 ns	500 mA	Standard	150 °C	-55 °C	1.3 V	200 mA 500 ns	Sub SMA	1000 V	4 pF	5 µA	Surface Mount
Taiwan Semiconductor Corporation RSFML R3G	DO-219AB	500 ns	500 mA	Standard	150 °C	-55 °C	1.3 V	200 mA 500 ns	Sub SMA	1000 V	4 pF	5 µA	Surface Mount
Taiwan Semiconductor Corporation RSFML	DO-219AB	500 ns	500 mA	Standard	150 °C	-55 °C	1.3 V	200 mA 500 ns	Sub SMA	1000 V	4 pF	5 µA	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1000 V 500mA Surface Mount Sub SMA

Technical documentation and resources