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CSD16403Q5A Series

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.7 mOhm

Manufacturer: Texas Instruments
Link to Manufacturer Page: https://www.ti.com/

Catalog

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.7 mOhm

PartDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsPower Dissipation (Max)TechnologyPackage / CaseFET TypeVgs(th) (Max) @ IdOperating Temperature [Max]Operating Temperature [Min]Mounting TypeVgs (Max) [Max]Vgs (Max) [Min]Supplier Device PackageInput Capacitance (Ciss) (Max) @ Vds [Max]Current - Continuous Drain (Id) @ 25°CDrain to Source Voltage (Vdss)Gate Charge (Qg) (Max) @ Vgs
Texas Instruments
CSD16403Q5A
4.5 V, 10 V
2.8 mOhm
3.1 W
MOSFET (Metal Oxide)
8-PowerTDFN
N-Channel
1.9 V
150 °C
-55 °C
Surface Mount
16 V
-12 V
8-VSONP (5x6)
2660 pF
28 A, 100 A
25 V
18 nC

Key Features

Ultra Low Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5mm × 6mm Plastic PackageAPPLICATIONSPoint-of-Load Synchronous Buck Converter for Applications inNetworking, Telecom and Computing SystemsOptimized for Control FET ApplicationsNexFET is a trademark of Texas Instruments.Ultra Low Qgand QgdLow Thermal ResistanceAvalanche RatedPb Free Terminal PlatingRoHS CompliantHalogen FreeSON 5mm × 6mm Plastic PackageAPPLICATIONSPoint-of-Load Synchronous Buck Converter for Applications inNetworking, Telecom and Computing SystemsOptimized for Control FET ApplicationsNexFET is a trademark of Texas Instruments.

Description

AI
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.