MOSFET N-CH 100V 50A TO252
| Part | Package / Case | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | FET Type | Technology | Supplier Device Package | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 4 V | 1950 pF | 50 nC | 50 A | 20 V | -55 °C | 175 ░C | 100 V | Surface Mount | 10 V | 7.5 V | N-Channel | MOSFET (Metal Oxide) | TO-252AA | 8.9 mOhm | 125 W |