IC GATE DRVR HALF-BRIDGE 28SOIC
| Part | Supplier Device Package | Channel Type | Package / Case | Package / Case [x] | Package / Case [y] | High Side Voltage - Max (Bootstrap) [Max] | Input Type | Driven Configuration | Voltage - Supply [Max] | Voltage - Supply [Min] | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Operating Temperature | Logic Voltage - VIL, VIH [custom] | Logic Voltage - VIL, VIH [custom] | Mounting Type | Number of Drivers | Gate Type | Package / Case | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 28-SOIC | 3-Phase | 28-SOIC | 0.295 in | 7.5 mm | 600 V | Inverting | Half-Bridge | 20 V | 10 VDC | 500 mA | 250 mA | 125 ¯C | 2.2 V | 0.8 V | Surface Mount | 6 | IGBT N-Channel MOSFET | ||
Infineon Technologies | 28-SOIC | 3-Phase | 28-SOIC | 0.295 in | 7.5 mm | 600 V | Inverting | Half-Bridge | 20 V | 10 VDC | 500 mA | 250 mA | 125 ¯C | 2.2 V | 0.8 V | Surface Mount | 6 | IGBT N-Channel MOSFET | ||
Infineon Technologies | 44-PLCC 32 Leads (16.58x16.58) | 3-Phase | 44-LCC (J-Lead) | 600 V | Inverting | Half-Bridge | 20 V | 10 VDC | 500 mA | 250 mA | 125 ¯C | 2.2 V | 0.8 V | Surface Mount | 6 | IGBT N-Channel MOSFET | 32 Leads | |||
Infineon Technologies | 28-PDIP | 3-Phase | 28-DIP | 600 V | Inverting | Half-Bridge | 20 V | 10 VDC | 500 mA | 250 mA | 125 ¯C | 2.2 V | 0.8 V | Through Hole | 6 | IGBT N-Channel MOSFET | 0.6 in | 15.24 mm | ||
Infineon Technologies | 44-PLCC 32 Leads (16.58x16.58) | 3-Phase | 44-LCC (J-Lead) | 600 V | Inverting | Half-Bridge | 20 V | 10 VDC | 500 mA | 250 mA | 125 ¯C | 2.2 V | 0.8 V | Surface Mount | 6 | IGBT N-Channel MOSFET | 32 Leads | |||
Infineon Technologies | 28-SOIC | 3-Phase | 28-SOIC | 0.295 in | 7.5 mm | 600 V | Inverting | Half-Bridge | 20 V | 10 VDC | 500 mA | 250 mA | 125 ¯C | 2.2 V | 0.8 V | Surface Mount | 6 | IGBT N-Channel MOSFET | ||
Infineon Technologies | 28-SOIC | 3-Phase | 28-SOIC | 0.295 in | 7.5 mm | 600 V | Inverting | Half-Bridge | 20 V | 10 VDC | 500 mA | 250 mA | 125 ¯C | 2.2 V | 0.8 V | Surface Mount | 6 | IGBT N-Channel MOSFET |