
UCC21530-Q1 Series
Manufacturer: Texas Instruments
AUTOMOTIVE, 4A, 6A, 5.7KVRMS, ISOLATED DUAL-CHANNEL GATE DRIVER WITH EN AND DT PINS FOR IGBT/SIC
| Part | Approval Agency | Pulse Width Distortion (Max) | Qualification | Voltage - Output Supply (Min) | Voltage - Output Supply (Max) | Number of Channels | Package Name | Voltage - Isolation | Current - Peak Output (Min) | Current - Peak Output (Max) | Rise Time (Typ) | Fall Time (Typ) | Current - Output High | Current - Output Low | Mounting Type | Operating Temperature (Min) | Operating Temperature (Max) | Grade | Propagation Delay tpLH (Max) | Propagation Delay tpHL (Max) | Technology | Common Mode Transient Immunity (Min) | Package Width | Package Length | Input Type | Number of Drivers | Voltage - Supply (Minimum) | Voltage - Supply (Maximum) | Driven Configuration | Channel Type | Gate Channel | Gate Type | Current - Peak Output (Sink) | Current - Peak Output (Source) | Logic Voltage - VIH | Logic Voltage - VIL |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments | IEC/EN/DIN UL VDE | 6 ns | AEC-Q100 | 13.5 V | 25 V | 2 | 14-SOIC | 5.7 kV | 4 A | 6 A | 6 ns | 7 ns | 4 A | 6 A | Surface Mount | -40 °C | 150 °C | Automotive | 45 ns | 45 ns | Capacitive Coupling | 125 V/ns | 7.5 mm | 0.295 in | ||||||||||||
Texas Instruments | AEC-Q100 | 14-SOIC | 6 ns | 7 ns | Surface Mount | -40 °C | 130 °C | Automotive | 7.5 mm | 0.295 in | CMOS/TTL | 2 | 3 V | 18 V | Half-Bridge | Independent | N-Channel P-Channel | IGBT MOSFET N-Channel P-Channel MOSFET | 6 A | 4 A | 1.6 V | 1.2 V | ||||||||||||||
Texas Instruments | CQC CSA UL VDE | 6 ns | AEC-Q100 | 14.7 V | 25 V | 2 | 14-SOIC | 5.7 kV | 4 A | 6 A | 6 ns | 7 ns | 4 A | 6 A | Surface Mount | -40 °C | 125 °C | Automotive | 30 ns | 30 ns | Capacitive Coupling | 100 V/ns | 7.5 mm | 0.295 in | ||||||||||||
Texas Instruments | AEC-Q100 | 14-SOIC | 6 ns | 7 ns | Surface Mount | -40 °C | 130 °C | Automotive | 7.5 mm | 0.295 in | CMOS/TTL | 2 | 3 V | 18 V | Half-Bridge | Independent | N-Channel P-Channel | IGBT MOSFET N-Channel P-Channel MOSFET | 6 A | 4 A | 1.6 V | 1.2 V |