TRANSISTOR: IGBT; GENX3™; 650V; 50A; 600W; TO247-3
| Part | Reverse Recovery Time (trr) | Current - Collector Pulsed (Icm) | Mounting Type | Supplier Device Package | Gate Charge | Test Condition | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Switching Energy | Vce(on) (Max) @ Vge, Ic | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Power - Max [Max] | Td (on/off) @ 25°C | IGBT Type | Current - Collector (Ic) (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 36 ns | 250 A | Through Hole | TO-247 (IXTH) | 86 nC | 5 Ohm 15 V 36 A 400 V | 650 V | 132 A | 800 µJ 800 µJ | 2.1 V | -55 °C | 175 ░C | TO-247-3 | 600 W | 20 ns 90 ns | |||
IXYS | 120 ns | 250 A | Through Hole | TO-247 (IXTH) | 80 nC | 5 Ohm 15 V 36 A 400 V | 650 V | 1.3 mJ 370 µJ | 2.1 V | -55 °C | 175 ░C | TO-247-3 | 600 W | 22 ns 80 ns | PT | 130 A | ||
IXYS | 195 ns | 210 A | Through Hole | TO-247 (IXTH) | 142 nC | 5 Ohm 15 V 50 A 600 V | 1 mJ 3 mJ | 4 V | -55 °C | 150 °C | TO-247-3 | 625 W | 28 ns 133 ns | 90 A | 1200 V | |||
IXYS | 250 A | Through Hole | TO-247 (IXTH) | 80 nC | 5 Ohm 15 V 36 A 400 V | 650 V | 1.3 mJ 370 µJ | 2.1 V | -55 °C | 175 ░C | TO-247-3 | 600 W | 22 ns 80 ns | PT | 130 A | |||
IXYS | 240 A | Through Hole | TO-247 (IXYH) | 142 nC | 5 Ohm 15 V 50 A 600 V | 1 mJ 3 mJ | 3.5 V | -55 °C | 175 ░C | TO-247-3 | 750 W | 28 ns 133 ns | 100 A | 1200 V |