CSD25485 Series
Manufacturer: Texas Instruments
-20-V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 0.8 MM X 1.5 MM, 42 MOHM, GATE ESD PROTECTION
| Part | Package / Case | Package Name | FET Type | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Vgs(th) (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Vgs (Max) | Input Capacitance (Ciss) (Max) | Technology | Gate Charge (Max) | Mounting Type | Rds On (Max) | Current - Continuous Drain (Id) (Ta) | Operating Temperature (Min) | Operating Temperature (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments | 3-SMD 3-XFDFN No Lead | 3-PICOSTAR | P-Channel | 20 V | 1.4 W | 1.3 V | 8 V | 1.8 V | -12 V | 533 pF | MOSFET (Metal Oxide) | 3.5 nC 3.5 nC | Surface Mount | 35 mOhm | 5.3 A | -55 °C | 150 °C |