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74TVC3306 Series

5-V dual voltage clamp

Manufacturer: Texas Instruments

Catalog(3 parts)

PartSupplier Device PackageMounting TypeOperating TemperatureOperating TemperatureLogic TypePackage / CasePackage / CasePackage / Case
Texas Instruments
SN74TVC3306DCTR
Voltage Clamp IC SM8
SM8
Surface Mount
-40 °C
85 °C
Voltage Clamp
Texas Instruments
SN74TVC3306DCUR
Voltage Clamp IC 8-VSSOP
Surface Mount
-40 °C
85 °C
Voltage Clamp
0.002311399905011058 m
8-VFSOP
0.002300000051036477 m
Texas Instruments
SN74TVC3306DCTRE4
Voltage Clamp IC SM8
SM8
Surface Mount
-40 °C
85 °C
Voltage Clamp

Key Features

Designed to be used in voltage-limiting applications3.5-ω on-state connection between ports A and BFlow-through pinout for ease of printed circuit board trace routingDirect interface with GTL+ levelsLatch-up performance exceeds 100 mA per JESD 78, class IIESD protection exceeds JESD 22:2000-V Human-Body Model200-V Machine Model1000-V Charged-Device ModelDesigned to be used in voltage-limiting applications3.5-ω on-state connection between ports A and BFlow-through pinout for ease of printed circuit board trace routingDirect interface with GTL+ levelsLatch-up performance exceeds 100 mA per JESD 78, class IIESD protection exceeds JESD 22:2000-V Human-Body Model200-V Machine Model1000-V Charged-Device Model

Description

AI
The SN74TVC3306 device provides three parallel NMOS pass transistors with a common unbuffered gate. The low on-state resistance of the switch allows connections to be made with minimal propagation delay. The device can be used as a dual switch, with the gates cascaded together to a reference transistor. The low-voltage side of each pass transistor is limited to a voltage set by the reference transistor. This is done to protect components with inputs that are sensitive to high-state voltage-level overshoots. The SN74TVC3306 device provides three parallel NMOS pass transistors with a common unbuffered gate. The low on-state resistance of the switch allows connections to be made with minimal propagation delay. The device can be used as a dual switch, with the gates cascaded together to a reference transistor. The low-voltage side of each pass transistor is limited to a voltage set by the reference transistor. This is done to protect components with inputs that are sensitive to high-state voltage-level overshoots.