STWA67 Series

N-channel 600 V, 45 mOhm typ., 58 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

Catalog

N-channel 600 V, 45 mOhm typ., 58 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

Part	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Technology	FET Type	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs
STMicroelectronics STWA67N60M6
STMicroelectronics STWA67N60M6
STMicroelectronics STWA67N60DM6
STMicroelectronics STWA67N60M6	25 V	10 V	330 W	4.75 V	49 mOhm	TO-247 Long Leads	52 A	TO-247-3	72.5 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	N-Channel	Through Hole	3400 pF	600 V
STMicroelectronics STWA67N60DM6	25 V	10 V		4.75 V		TO-247 Long Leads	58 A	TO-247-3	72.5 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	N-Channel	Through Hole	3400 pF	600 V	431 W	54 mOhm

Catalog

N-channel 600 V, 45 mOhm typ., 58 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.