STWA67N60M6

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STMicroelectronics

N-CHANNEL 600 V, 45 MOHM TYP., 52 A MDMESH M6 POWER MOSFET IN A TO-247 LONG LEADS PACKAGE

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STWA67N60M6

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STMicroelectronics

N-CHANNEL 600 V, 45 MOHM TYP., 52 A MDMESH M6 POWER MOSFET IN A TO-247 LONG LEADS PACKAGE

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Technical Specifications

Parameters and characteristics for this part

Specification	STWA67N60M6

Current - Continuous Drain (Id) @ 25°C	52 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	72.5 nC
Input Capacitance (Ciss) (Max) @ Vds	3400 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	330 W
Rds On (Max) @ Id, Vgs [Max]	49 mOhm
Supplier Device Package	TO-247 Long Leads
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4.75 V

STWA67N60M6 Series

N-channel 600 V, 45 mOhm typ., 52 A MDmesh M6 Power MOSFET in a TO-247 long leads package

Part	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Technology	FET Type	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)
STMicroelectronics STWA67N60M6	25 V	10 V	330 W	4.75 V	49 mOhm	TO-247 Long Leads	52 A	TO-247-3	72.5 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	N-Channel	Through Hole	3400 pF	600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 8.58
		10	$ 7.36
		100	$ 6.13
		600	$ 5.41
		1200	$ 4.87

Description

General part information

STWA67N60M6 Series

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

Documents

Technical documentation and resources