CSD85302L Series

20-V, N channel NexFET™ power MOSFET, dual common drain LGA 1.35 mm x 1.35 mm, 24 mOhm, gate ESD pro

Catalog

20-V, N channel NexFET™ power MOSFET, dual common drain LGA 1.35 mm x 1.35 mm, 24 mOhm, gate ESD pro

Part	Package / Case	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Channel Count	Configuration	Power - Max	Package Name	Package Length	Package Width	Gate Charge (Max)	Mounting Type
Texas Instruments CSD85302LT	4-XFLGA	MOSFET (Metal Oxide)	-55 °C	150 °C	2	N-Channel (Dual) Common Drain	1.7 W	4-Picostar	1.31 mm	1.31 mm	7.8 nC	Surface Mount
Texas Instruments CSD85302L	4-XFLGA	MOSFET (Metal Oxide)	-55 °C	150 °C	2	N-Channel (Dual) Common Drain	1.7 W	4-Picostar	1.31 mm	1.31 mm	7.8 nC	Surface Mount

Catalog

20-V, N channel NexFET™ power MOSFET, dual common drain LGA 1.35 mm x 1.35 mm, 24 mOhm, gate ESD pro

Description

This 20 V, 18.7 mΩ, 1.35 mm × 1.35 mm LGA Dual NexFET power MOSFET is designed to minimize resistance in the smallest footprint. Its small footprint and common drain configuration make the device ideal for battery-powered applications in small handheld devices. This 20 V, 18.7 mΩ, 1.35 mm × 1.35 mm LGA Dual NexFET power MOSFET is designed to minimize resistance in the smallest footprint. Its small footprint and common drain configuration make the device ideal for battery-powered applications in small handheld devices.