MOSFET N-CH 60V 150A TO263
| Part | Drain to Source Voltage (Vdss) | Package / Case | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Technology | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Siliconix SUM50010E-GE3 | 60 V | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | N-Channel | 10895 pF | 1.75 mOhm | MOSFET (Metal Oxide) | TO-263 (D2PAK) | -55 °C | 175 ░C | Surface Mount | 212 nC | 20 V | 150 A | 375 W | 10 V | 7.5 V | 4 V |