SUM50010E-GE3

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 60V 150A TO263

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 60V 150A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	SUM50010E-GE3

Current - Continuous Drain (Id) @ 25°C	150 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	212 nC
Input Capacitance (Ciss) (Max) @ Vds	10895 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	375 W
Rds On (Max) @ Id, Vgs	1.75 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drain to Source Voltage (Vdss)	Package / Case	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Vgs(th) (Max) @ Id
Vishay General Semiconductor - Diodes Division SUM50010E-GE3	60 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	10895 pF	1.75 mOhm	MOSFET (Metal Oxide)	TO-263 (D2PAK)	-55 °C	175 ░C	Surface Mount	212 nC	20 V	150 A	375 W	10 V	7.5 V	4 V

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General part information

N-Channel 60 V 150A (Tc) 375W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources