CSD23203W Series

-8V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 19.4 mOhm, gate ESD protection

Catalog

-8V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 19.4 mOhm, gate ESD protection

Part	Power Dissipation (Max)	Technology	Input Capacitance (Ciss) (Max)	Rds On (Max)	Gate Charge (Max)	Package / Case	Package Name	Package Width	Package Length	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Ta)	FET Type	Vgs (Max)	Mounting Type	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)
Texas Instruments CSD23203WT	750 mW	MOSFET (Metal Oxide)	914 pF	19.4 mOhm	6.3 nC	6-UFBGA DSBGA	6-DSBGA	1.5 mm	1 mm	4.5 V	1.8 V	8 V	3 A	P-Channel	-6 V	Surface Mount	1.1 V	-55 °C	150 °C
Texas Instruments CSD23203W	750 mW	MOSFET (Metal Oxide)	914 pF	19.4 mOhm	6.3 nC	6-UFBGA DSBGA	6-DSBGA	1.5 mm	1 mm	4.5 V	1.8 V	8 V	3 A	P-Channel	-6 V	Surface Mount	1.1 V	-55 °C	150 °C

Catalog

-8V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 19.4 mOhm, gate ESD protection

Description

This 16.2-mΩ, –8-V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile. This 16.2-mΩ, –8-V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile.