Beta
⌘K
INFINEON’S IPB90N06S4L-04 WITH 60V RDS, HIGH CURRENT CAPABILITY, AND OPTIMIZED THERMAL EFFICIENCY. IDEAL FOR VALVES, SOLENOIDS, AND LIGHTING CONTROL. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.
| Part | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Grade | Package / Case | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Mounting Type | Vgs (Max) | Qualification | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | PG-TO263-3-2 | 170 nC | 4.5 V 10 V | N-Channel | -55 °C | 175 ░C | MOSFET (Metal Oxide) | Automotive | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 150 W | 90 A | 13000 pF | 60 V | Surface Mount | 16 V | AEC-Q101 | 2.2 V | |
Infineon Technologies | 128 nC | 10 V | N-Channel | -55 °C | 175 ░C | MOSFET (Metal Oxide) | Automotive | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 150 W | 90 A | 10400 pF | 60 V | Surface Mount | 20 V | AEC-Q101 | 4 V | 4 mOhm |