DIODE SIL CARBIDE 650V 3A TO220F
| Part | Speed | Reverse Recovery Time (trr) | Voltage - DC Reverse (Vr) (Max) [Max] | Voltage - Forward (Vf) (Max) @ If | Mounting Type | Technology | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Current - Average Rectified (Io) | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Package / Case | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Comchip Technology CDBJFSC3650-G | No Recovery Time | 0 ns | 650 V | 1.7 V | Through Hole | SiC (Silicon Carbide) Schottky | 100 µA | 190 pF | 3 A | 175 ░C | -55 C | TO-220-2 Full Pack | TO-220F |