TPSI20 Series
Automotive, two-channel 600-V 50-mA isolated switch with 2-mA avalanche rating
Manufacturer: Texas Instruments
Catalog(1 parts)
| Part | Mounting Type | Supplier Device Package | Termination Style | On-State Resistance (Max)▲▼ | Grade | Load Current▲▼ | Operating Temperature▲▼ | Operating Temperature▲▼ | Approval Agency | Voltage - Input▲▼ | Voltage - Input▲▼ | Qualification | Circuit | Package / Case▲▼ | Package / Case▲▼ | Package / Case | Voltage - Load▲▼ | Voltage - Load▲▼ | Output Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Surface Mount | 11-SOIC | Gull Wing | 150 Ω | Automotive | 0.05000000074505806 A | 125 °C | -40 °C | CQC, CSA, TUV, UL, VDE | 20 V | 4.5 V | AEC-Q100 | DPST-NO (2 Form A) | 0.007493000011891127 m | 0.007499999832361937 m | 11-SOIC | 600 V | 0 V | DC |
Key Features
• Qualified for automotive applicationsAEC-Q100 grade 1: –40 to 125°C T AIntegrated avalanche rated MOSFETsDesigned and qualified for reliability for dielectric withstand testing (Hi-Pot)I AVA = 2-mA for 5-s pulses, 1-mA for 60-s pulsesV HIPOT, 5-s = 4300-V with R series > 1.83-MΩV HIPOT, 5-s = 2850-V with R series > 1.1-MΩ600-V standoff voltageR ON = 65-Ω (T J = 25°C)I OFF = 1-µA at 500-V (T J = 105°C)Low primary side supply current5-mA single channel, 9-mA two channel ON state currentFunctional Safety CapableDocumentation availableto aid in ISO 26262 and IEC 61508 system designRobust isolation barrier:> 26 year projected lifetime at 1000-V RMS / 1500-V DC working voltageIsolation rating, V ISO, up to 3750-V RMS / 5300-V DCSOIC 11-pin (DWQ) package with wide pins for improved thermal performanceCreepage and clearance ≥ 8-mm (primary-secondary)Creepage and clearance ≥ 3-mm (across switch terminals)Safety-related certifications(Planned) DIN VDE V 0884-11:2017-01(Planned) UL 1577 component recognition programQualified for automotive applicationsAEC-Q100 grade 1: –40 to 125°C T AIntegrated avalanche rated MOSFETsDesigned and qualified for reliability for dielectric withstand testing (Hi-Pot)I AVA = 2-mA for 5-s pulses, 1-mA for 60-s pulsesV HIPOT, 5-s = 4300-V with R series > 1.83-MΩV HIPOT, 5-s = 2850-V with R series > 1.1-MΩ600-V standoff voltageR ON = 65-Ω (T J = 25°C)I OFF = 1-µA at 500-V (T J = 105°C)Low primary side supply current5-mA single channel, 9-mA two channel ON state currentFunctional Safety CapableDocumentation availableto aid in ISO 26262 and IEC 61508 system designRobust isolation barrier:> 26 year projected lifetime at 1000-V RMS / 1500-V DC working voltageIsolation rating, V ISO, up to 3750-V RMS / 5300-V DCSOIC 11-pin (DWQ) package with wide pins for improved thermal performanceCreepage and clearance ≥ 8-mm (primary-secondary)Creepage and clearance ≥ 3-mm (across switch terminals)Safety-related certifications(Planned) DIN VDE V 0884-11:2017-01(Planned) UL 1577 component recognition program
Description
AI
The TPSI2072-Q1 is a two channel isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2072-Q1 uses TI’s high reliability capacitive isolation technology in combination with internal back-to-back MOSFETs to form a completely integrated solution requiring no secondary side power supply. The TPSI2072-Q1 improves system reliability as TI’s capacitive isolation technology does not suffer from mechanical wearout or photo degradation failure modes common in mechanical relay and photo relay components.
The primary side of the device is powered by only 9 mA of input current and incorporates fail-safe EN1 and EN2 pins preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 4.5 V–20 V and the EN1 and EN2 pins of the device should be driven by a GPIO output with logic HI between 2.1 V–20 V. In other applications, the VDD, EN1, and EN2 pins could be driven together directly from the system supply or from a GPIO output.
Each channel on the secondary side consists of back-to-back MOSFETs with a standoff voltage of +/-600 V from SM to S1 and SM to S2. The TPSI2072-Q1 MOSFET’s avalanche robustness and thermally conscious package design allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 2 mA without requiring any external components.
The TPSI2072-Q1 is a two channel isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2072-Q1 uses TI’s high reliability capacitive isolation technology in combination with internal back-to-back MOSFETs to form a completely integrated solution requiring no secondary side power supply. The TPSI2072-Q1 improves system reliability as TI’s capacitive isolation technology does not suffer from mechanical wearout or photo degradation failure modes common in mechanical relay and photo relay components.
The primary side of the device is powered by only 9 mA of input current and incorporates fail-safe EN1 and EN2 pins preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device should be connected to a system supply between 4.5 V–20 V and the EN1 and EN2 pins of the device should be driven by a GPIO output with logic HI between 2.1 V–20 V. In other applications, the VDD, EN1, and EN2 pins could be driven together directly from the system supply or from a GPIO output.
Each channel on the secondary side consists of back-to-back MOSFETs with a standoff voltage of +/-600 V from SM to S1 and SM to S2. The TPSI2072-Q1 MOSFET’s avalanche robustness and thermally conscious package design allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 2 mA without requiring any external components.