NVCR4LS3D6N08M7A Series

Power MOSFET, N-Channel, 80 V, 3.6 mΩ, Bare Die

Catalog

Power MOSFET, N-Channel, 80 V, 3.6 mΩ, Bare Die

Part	Gate Charge (Max)	FET Type	Drain to Source Voltage (Vdss)	Qualification	Mounting Type	Grade	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Vgs(th) (Max)	Technology	Input Capacitance (Ciss) (Max)	Package Name	Package / Case	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id)
ON Semiconductor NVCR4LS3D6N08M7A	68 nC	N-Channel	80 V	AEC-Q101	Surface Mount	Automotive	10 V	20 V	4 V	MOSFET (Metal Oxide)	4840 pF	Die	Die	227 W	-55 °C	175 °C	4.2 mOhm	164 A	164 A

Catalog

Power MOSFET, N-Channel, 80 V, 3.6 mΩ, Bare Die

Key Features

• Low RDS(on)

• Low QGand Capacitance

• AEC−Q101 Qualified and PPAP Capable

Description

NVCR4LS3D6N08M7A is a 80 V 3.6 mΩ Automotive Power MOSFET Bare die with a die size of 3.810 mm x 2.463 mm. It can be used to build power module with Al wirebonding. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.