NVCR4LS3D6N08M7A
UnknownON Semiconductor
POWER MOSFET, N-CHANNEL, 80 V, 3.6 MΩ, BARE DIE
NVCR4LS3D6N08M7A
UnknownON Semiconductor
POWER MOSFET, N-CHANNEL, 80 V, 3.6 MΩ, BARE DIE
Description
General part information
NVCR4LS3D6N08M7A Series
NVCR4LS3D6N08M7A is a 80 V 3.6 mΩ Automotive Power MOSFET Bare die with a die size of 3.810 mm x 2.463 mm. It can be used to build power module with Al wirebonding. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | NVCR4LS3D6N08M7A |
|---|---|
| Current - Continuous Drain (Id) | 164 A |
| Current - Continuous Drain (Id) (Tc) | 164 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 68 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 4840 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | Die |
| Package Name | Die |
| Power Dissipation (Max) | 227 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 4.2 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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