CSD13383 Series

12-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 44 mOhm, gate ESD protection

Link to Manufacturer Page: https://www.ti.com/

Catalog

12-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 44 mOhm, gate ESD protection

Part	Technology	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Vgs (Max) [Max]	Vgs (Max) [Min]
Texas Instruments CSD13383F4	MOSFET (Metal Oxide)	3-XFDFN	3-PICOSTAR	44 mOhm	2.5 V, 4.5 V	500 mW	150 °C	-55 °C	Surface Mount	12 V	291 pF	N-Channel	2.9 A	2.6 nC	1.25 V	10 V	-10 V

Key Features

• Low on-resistanceUltra low Qgand QgdUltra-small footprint (0402 case size)1.0 mm × 0.6 mmLow profile0.36 mm heightIntegrated ESD protection diodeRated >2 kV HBMRated >2 kV CDMLead and halogen freeRoHS compliantLow on-resistanceUltra low Qgand QgdUltra-small footprint (0402 case size)1.0 mm × 0.6 mmLow profile0.36 mm heightIntegrated ESD protection diodeRated >2 kV HBMRated >2 kV CDMLead and halogen freeRoHS compliant

Description

This 37 mΩ, 12 V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. . . . . This 37 mΩ, 12 V N-channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. . . . .