Zenode.ai Logo

74CB3Q16211 Series

3.3-V, 1:1 (SPST), 24-channel general-purpose FET bus switch

Manufacturer: Texas Instruments

Catalog(5 parts)

PartSupplier Device PackageCircuitCircuitIndependent CircuitsVoltage Supply SourceMounting TypeOperating TemperatureOperating TemperatureVoltage - SupplyVoltage - SupplyTypePackage / CasePackage / CasePackage / CasePackage / CasePackage / Case
Texas Instruments
SN74CB3Q16211DGVR
Bus Switch 12 x 1:1 56-TVSOP
56-TVSOP
1:1
12 ul
2 ul
Single Supply
Surface Mount
-40 °C
85 °C
3.5999999046325684 V
2.299999952316284 V
Bus Switch
0.004399999976158142 m
56-TFSOP
0.004394200164824724 m
Texas Instruments
SN74CB3Q16211DGGR
Bus Switch 12 x 1:1 56-TSSOP
56-TSSOP
1:1
12 ul
2 ul
Single Supply
Surface Mount
-40 °C
85 °C
3.5999999046325684 V
2.299999952316284 V
Bus Switch
0.006099999882280827 m
56-TFSOP
0.006095999851822853 m
Texas Instruments
SN74CB3Q16211ZQLR
Bus Switch 12 x 1:1 56-BGA Microstar Junior (7x4.5)
56-BGA Microstar Junior (7x4.5)
1:1
12 ul
2 ul
Single Supply
Surface Mount
-40 °C
85 °C
3.5999999046325684 V
2.299999952316284 V
Bus Switch
56-VFBGA
Texas Instruments
SN74CB3Q16211GQLR
Bus Switch 12 x 1:1 56-BGA Microstar Junior (7x4.5)
56-BGA Microstar Junior (7x4.5)
1:1
12 ul
2 ul
Single Supply
Surface Mount
-40 °C
85 °C
3.5999999046325684 V
2.299999952316284 V
Bus Switch
56-VFBGA
Texas Instruments
SN74CB3Q16211DL
Bus Switch 12 x 1:1 56-SSOP
56-SSOP
1:1
12 ul
2 ul
Single Supply
Surface Mount
-40 °C
85 °C
3.5999999046325684 V
2.299999952316284 V
Bus Switch
56-BSSOP
0.007493000011891127 m
0.007499999832361937 m

Key Features

Member of the Texas Instruments Widebus familyHigh-bandwidth data path (up to 500 MHz(1))5-V tolerant I/Os with device powered up or powered downLow and flat ON-state resistance (ron) characteristics over operating range (ron= 5 Ω typical)Rail-to-rail switching on data I/O ports0-V to 5-V switching with 3.3-V VCC0-V to 3.3-V switching with 2.5-V VCCBidirectional data flow, with near-zero propagation delayLow input or output capacitance minimizes loading and signal distortion (Cio(OFF)= 4 pF typical)Fast switching frequency (fOE= 20 MHz maximum)Data and control inputs provide undershoot clamp diodesLow power consumption (ICC= 1 mA typical)VCCoperating range from 2.3 V to 3.6 VData I/Os support 0-V to 5-V signaling levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, and 5 V)Control inputs can be driven by TTL or 5-V/3.3-V CMOS outputsIoffsupports partial-power-down mode operationLatch-up Performance Exceeds 100 mA Per JESD 78, Class IIESD Performance Tested Per JESD 222000-V Human-Body Model (A114-B, Class II)1000-V Charged-Device Model (C101)Supports both digital and analog applications: PCI interface, differential signal interface, memory interleaving, bus isolation, low-distortion signal gating(1)(1)For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report,CBT-C, CB3T, and CB3Q Signal-Switch Families.Member of the Texas Instruments Widebus familyHigh-bandwidth data path (up to 500 MHz(1))5-V tolerant I/Os with device powered up or powered downLow and flat ON-state resistance (ron) characteristics over operating range (ron= 5 Ω typical)Rail-to-rail switching on data I/O ports0-V to 5-V switching with 3.3-V VCC0-V to 3.3-V switching with 2.5-V VCCBidirectional data flow, with near-zero propagation delayLow input or output capacitance minimizes loading and signal distortion (Cio(OFF)= 4 pF typical)Fast switching frequency (fOE= 20 MHz maximum)Data and control inputs provide undershoot clamp diodesLow power consumption (ICC= 1 mA typical)VCCoperating range from 2.3 V to 3.6 VData I/Os support 0-V to 5-V signaling levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, and 5 V)Control inputs can be driven by TTL or 5-V/3.3-V CMOS outputsIoffsupports partial-power-down mode operationLatch-up Performance Exceeds 100 mA Per JESD 78, Class IIESD Performance Tested Per JESD 222000-V Human-Body Model (A114-B, Class II)1000-V Charged-Device Model (C101)Supports both digital and analog applications: PCI interface, differential signal interface, memory interleaving, bus isolation, low-distortion signal gating(1)(1)For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report,CBT-C, CB3T, and CB3Q Signal-Switch Families.

Description

AI
The SN74CB3Q16211 device is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q16211 device provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems. The SN74CB3Q16211 device is organized as two 12-bit bus switches with separate output-enable (1OE, 2OE) inputs. It can be used as two 12-bit bus switches or as one 24-bit bus switch. WhenOEis low, the associated 12-bit bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. WhenOEis high, the associated 12-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Ioffcircuitry prevents damaging current backflow through the device when it is powered down. To ensure the high-impedance state during power up or power down,OEshould be tied to VCCthrough a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver. The SN74CB3Q16211 device is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q16211 device provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems. The SN74CB3Q16211 device is organized as two 12-bit bus switches with separate output-enable (1OE, 2OE) inputs. It can be used as two 12-bit bus switches or as one 24-bit bus switch. WhenOEis low, the associated 12-bit bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. WhenOEis high, the associated 12-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. This device is fully specified for partial-power-down applications using Ioff. The Ioffcircuitry prevents damaging current backflow through the device when it is powered down. To ensure the high-impedance state during power up or power down,OEshould be tied to VCCthrough a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.