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OPTIMOS™ PD P-CHANNEL POWER MOSFET -30 V ; PQFN 3.3 X 3.3 PACKAGE; 8.6 MOHM;
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Mounting Type | Supplier Device Package | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Technology | FET Type | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | -55 °C | 150 °C | 8-PowerTDFN | Surface Mount | PG-TDSON-8 | 8.6 mOhm | 3190 pF | 6 V 10 V | 43.2 nC | 25 V | 30 V | 1.9 V | MOSFET (Metal Oxide) | P-Channel | 69 W |