DIODE GEN PURP 200V 8A TO263AB
| Part | Mounting Type | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) [Max] | Qualification | Capacitance @ Vr, F | Current - Average Rectified (Io) | Grade | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Supplier Device Package | Package / Case | Voltage - Forward (Vf) (Max) @ If | Technology | Speed | Reverse Recovery Time (trr) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Taiwan Semiconductor Corporation | Surface Mount | 10 µA | 200 V | AEC-Q101 | 80 pF | 8 A | Automotive | 150 °C | -55 °C | TO-263AB (D2PAK) | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 950 mV | Standard | 200 mA 500 ns | 35 ns |
Taiwan Semiconductor Corporation | Surface Mount | 10 µA | 200 V | 80 pF | 8 A | 150 °C | -55 °C | TO-263AB (D2PAK) | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 950 mV | Standard | 200 mA 500 ns | 35 ns |