SFAS804G

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Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 8A TO263AB

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Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 8A TO263AB

Technical Specifications

Parameters and characteristics for this part

Specification	SFAS804G

Capacitance @ Vr, F	80 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-263AB (D2PAK)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	950 mV

Part	Mounting Type	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Qualification	Capacitance @ Vr, F	Current - Average Rectified (Io)	Grade	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Package / Case	Voltage - Forward (Vf) (Max) @ If	Technology	Speed	Reverse Recovery Time (trr)
Taiwan Semiconductor Corporation SFAS804GH	Surface Mount	10 µA	200 V	AEC-Q101	80 pF	8 A	Automotive	150 °C	-55 °C	TO-263AB (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	950 mV	Standard	200 mA 500 ns	35 ns
Taiwan Semiconductor Corporation SFAS804G	Surface Mount	10 µA	200 V		80 pF	8 A		150 °C	-55 °C	TO-263AB (D2PAK)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	950 mV	Standard	200 mA 500 ns	35 ns

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General part information

Diode 200 V 8A Surface Mount TO-263AB (D2PAK)

Technical documentation and resources