IC FLASH 16MBIT SPI/QUAD 8SOP
| Part | Memory Format | Clock Frequency | Operating Temperature [Max] | Operating Temperature [Min] | Memory Organization | Memory Size | Memory Type | Technology | Memory Interface | Supplier Device Package | Mounting Type | Access Time | Package / Case | Package / Case [y] | Package / Case [x] | Voltage - Supply [Max] | Voltage - Supply [Min] | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited GD25LQ16ETIGR | FLASH | 133 MHz | 85 °C | -40 °C | 2 M | 16 Mb | Non-Volatile | FLASH - NOR (SLC) | QPI, Quad I/O, SPI | 8-SOP | Surface Mount | 6 ns | 8-SOIC | 3.9 mm | 0.154 in | 2.1 V | 1.65 V | 60 µs | 2.4 ms |
GigaDevice Semiconductor (HK) Limited GD25LQ16ET2GR | FLASH | 133 MHz | 105 °C | -40 °C | 2 M | 16 Mb | Non-Volatile | FLASH - NOR (SLC) | QPI, Quad I/O, SPI | 8-SOP | Surface Mount | 6 ns | 8-SOIC | 3.9 mm | 0.154 in | 2.1 V | 1.65 V | 60 µs | 2.4 ms |
GigaDevice Semiconductor (HK) Limited GD25LQ16ENEGR | FLASH | 133 MHz | 125 °C | -40 °C | 2 M | 16 Mb | Non-Volatile | FLASH - NOR (SLC) | QPI, Quad I/O, SPI | 8-USON (3x4) | Surface Mount | 6 ns | 8-UDFN Exposed Pad | 2.1 V | 1.65 V | 100 µs | 4 ms | ||
GigaDevice Semiconductor (HK) Limited GD25LQ16CTIGR | FLASH | 104 MHz | 85 °C | -40 °C | 2 M | 16 Mb | Non-Volatile | FLASH - NOR | SPI - Quad I/O | 8-SOP | Surface Mount | 8-SOIC | 3.9 mm | 0.154 in | 2.1 V | 1.65 V | 50 µs | 2.4 ms | |
GigaDevice Semiconductor (HK) Limited GD25LQ16EWIGY | FLASH | 133 MHz | 85 °C | -40 °C | 2 M | 16 Mb | Non-Volatile | FLASH - NOR (SLC) | QPI, Quad I/O, SPI | 8-WSON (5x6) | Surface Mount | 6 ns | 8-WDFN Exposed Pad | 2.1 V | 1.65 V | 60 µs | 2.4 ms | ||
GigaDevice Semiconductor (HK) Limited GD25LQ16ESIGR | FLASH | 133 MHz | 85 °C | -40 °C | 2 M | 16 Mb | Non-Volatile | FLASH - NOR (SLC) | QPI, Quad I/O, SPI | 8-SOP | Surface Mount | 6 ns | 8-SOIC | 5.3 mm | 0.209 " | 2.1 V | 1.65 V | 60 µs | 2.4 ms |
GigaDevice Semiconductor (HK) Limited GD25LQ16ENIGR | FLASH | 133 MHz | 85 °C | -40 °C | 2 M | 16 Mb | Non-Volatile | FLASH - NOR (SLC) | QPI, Quad I/O, SPI | 8-USON (3x4) | Surface Mount | 6 ns | 8-UDFN Exposed Pad | 2.1 V | 1.65 V | 60 µs | 2.4 ms | ||
GigaDevice Semiconductor (HK) Limited GD25LQ16EEAGR | FLASH | 133 MHz | 125 °C | -40 °C | 2 M | 16 Mb | Non-Volatile | FLASH - NOR (SLC) | QPI, Quad I/O, SPI | 8-USON (3x2) | Surface Mount | 6 ns | 8-XFDFN Exposed Pad | 2.1 V | 1.65 V | 100 µs | 4 ms | ||
GigaDevice Semiconductor (HK) Limited GD25LQ16ETJGR | FLASH | 133 MHz | 105 °C | -40 °C | 2 M | 16 Mb | Non-Volatile | FLASH - NOR (SLC) | QPI, Quad I/O, SPI | 8-SOP | Surface Mount | 6 ns | 8-SOIC | 3.9 mm | 0.154 in | 2.1 V | 1.65 V | 60 µs | 2.4 ms |
GigaDevice Semiconductor (HK) Limited GD25LQ16EWIGR | FLASH | 133 MHz | 85 °C | -40 °C | 2 M | 16 Mb | Non-Volatile | FLASH - NOR (SLC) | QPI, Quad I/O, SPI | 8-WSON (5x6) | Surface Mount | 6 ns | 8-WDFN Exposed Pad | 2.1 V | 1.65 V | 60 µs | 2.4 ms |