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GD25LQ16ENEGR

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GigaDevice Semiconductor (HK) Limited

IC FLASH 16MBIT SPI/QUAD 8USON

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GD25LQ16ENEGR

Active
GigaDevice Semiconductor (HK) Limited

IC FLASH 16MBIT SPI/QUAD 8USON

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationGD25LQ16ENEGR
Access Time6 ns
Clock Frequency133 MHz
Memory FormatFLASH
Memory InterfaceQuad I/O, QPI, SPI
Memory Organization2 M
Memory Size16 Mb
Memory TypeNon-Volatile
Mounting TypeSurface Mount
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 °C
Package / Case8-UDFN Exposed Pad
Supplier Device Package8-USON (3x4)
TechnologyFLASH - NOR (SLC)
Voltage - Supply [Max]2.1 V
Voltage - Supply [Min]1.65 V
Write Cycle Time - Word, Page [custom]100 µs
Write Cycle Time - Word, Page [custom]4 ms

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 3000$ 0.76
6000$ 0.74

Description

General part information

GD25LQ16ENEGR

FLASH - NOR (SLC) Memory IC 16Mbit SPI - Quad I/O, QPI 133 MHz 6 ns 8-USON (3x4)

Documents

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