CSD17507Q5A Series

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 10.8 mOhm

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 10.8 mOhm

Part	Package Width	Package Name	Package Length	FET Type	Input Capacitance (Ciss) (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Ta)	Drain to Source Voltage (Vdss)	Technology	Rds On (Max)	Power Dissipation (Max)	Vgs (Max)	Gate Charge (Max)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Package / Case
Texas Instruments CSD17507Q5AT	6 mm	8-VSONP	5 mm	N-Channel	530 pF	10 V	4.5 V	13 A	30 V	MOSFET (Metal Oxide)	10.8 mOhm	3 W	20 V	3.6 nC	Surface Mount	-55 °C	150 °C	2.1 V	8-PowerTDFN
Texas Instruments CSD17507Q5A	6 mm	8-VSONP	5 mm	N-Channel	530 pF	10 V	4.5 V	13 A	30 V	MOSFET (Metal Oxide)	10.8 mOhm	3 W	20 V	3.6 nC	Surface Mount	-55 °C	150 °C	2.1 V	8-PowerTDFN

Catalog

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 10.8 mOhm

Description

This 30-V, 9-mΩ, SON 5-mm × 6-mm NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. This 30-V, 9-mΩ, SON 5-mm × 6-mm NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.