IC DRAM 128MBIT PAR 90VFBGA
Part | Memory Size | Supplier Device Package | Memory Format | Memory Organization | Voltage - Supply [Max] | Voltage - Supply [Min] | Clock Frequency | Memory Interface | Write Cycle Time - Word, Page | Operating Temperature [Min] | Operating Temperature [Max] | Memory Type | Mounting Type | Access Time | Technology | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Winbond Electronics W987D2HBJX7E TR | 128 Mb | 90-VFBGA (8x13) | DRAM | 4M x 32 | 1.95 V | 1.7 V | 133 MHz | Parallel | 15 ns | -25 °C | 85 °C | Volatile | Surface Mount | 5.4 ns | SDRAM - Mobile LPSDR | 90-TFBGA |
Winbond Electronics W987D2HBJX6I | 128 Mb | 90-VFBGA (8x13) | DRAM | 4M x 32 | 1.95 V | 1.7 V | 166 MHz | Parallel | 15 ns | -40 °C | 85 °C | Volatile | Surface Mount | 5.4 ns | SDRAM - Mobile LPSDR | 90-TFBGA |
Winbond Electronics W987D2HBJX6I TR | 128 Mb | 90-VFBGA (8x13) | DRAM | 4M x 32 | 1.95 V | 1.7 V | 166 MHz | Parallel | 15 ns | -40 °C | 85 °C | Volatile | Surface Mount | 5.4 ns | SDRAM - Mobile LPSDR | 90-TFBGA |
Winbond Electronics W987D2HBJX7E | 128 Mb | 90-VFBGA (8x13) | DRAM | 4M x 32 | 1.95 V | 1.7 V | 133 MHz | Parallel | 15 ns | -25 °C | 85 °C | Volatile | Surface Mount | 5.4 ns | SDRAM - Mobile LPSDR | 90-TFBGA |