UCC27282-Q1 Series

Automotive 3-A, 120-V half bridge driver with 5-V UVLO, interlock and enable

Link to Manufacturer Page: https://www.ti.com/

Catalog

Automotive 3-A, 120-V half bridge driver with 5-V UVLO, interlock and enable

Part	Input Type	Operating Temperature [Max]	Operating Temperature [Min]	Voltage - Supply [Min]	Voltage - Supply [Max]	High Side Voltage - Max (Bootstrap) [Max]	Channel Type	Gate Type	Qualification	Package / Case	Package / Case	Mounting Type	Supplier Device Package	Number of Drivers	Driven Configuration	Rise / Fall Time (Typ)	Logic Voltage - VIL, VIH	Grade
Texas Instruments UCC27282QDRQ1	Non-Inverting	125 °C	-40 °C	5.5 V	16 V	120 V	Independent	N-Channel MOSFET	AEC-Q100	3.9 mm	8-SOIC	Surface Mount	8-SOIC	2	Half-Bridge	10 ns, 12 ns	0.9 V, 2.4 V	Automotive
Texas Instruments UCC27282QDDAQ1	Non-Inverting	125 °C	-40 °C	5.5 V	16 V	120 V	Synchronous	N-Channel MOSFET	AEC-Q100	3.9 mm	8-SOIC	Surface Mount	8-SOIC	2	Half-Bridge	10 ns, 12 ns	1.3 V, 1.9 V	Automotive
Texas Instruments UCC27282QDDARQ1	Non-Inverting	125 °C	-40 °C	5.5 V	16 V	120 V	Synchronous	N-Channel MOSFET	AEC-Q100	3.9 mm	8-SOIC	Surface Mount	8-SOIC	2	Half-Bridge	10 ns, 12 ns	1.3 V, 1.9 V	Automotive
Texas Instruments UCC27282QDRCTQ1	Non-Inverting	125 °C	-40 °C	5.5 V	16 V	120 V	Synchronous	N-Channel MOSFET	AEC-Q100		10-VFDFN Exposed Pad	Surface Mount	10-VSON (3x3)	2	Half-Bridge	10 ns, 12 ns	1.3 V, 1.9 V	Automotive
Texas Instruments UCC27282QDRCRQ1	Non-Inverting	125 °C	-40 °C	5.5 V	16 V		Independent	N-Channel MOSFET	AEC-Q100		10-VFDFN Exposed Pad	Surface Mount	10-VSON (3x3)	2	Half-Bridge	10 ns, 12 ns	1.3 V, 1.9 V	Automotive

Key Features

• AEC-Q100 qualified with following resultsTemperature grade 1 (Tj= –40°C to 150°C)HBM ESD classification level 1BCDM ESD classification level C3Drives two N-channel MOSFETs in high-side low-side configuration5-V typical under voltage lockoutInput interlockEnable/disable functionality in DRC package16-ns typical propagation delay12-ns rise, 10-ns fall time with 1.8-nF load1-ns typical delay matchingAbsolute Maximum Negative Voltage Handling on Inputs (–5 V)Absolute Maximum Negative Voltage Handling on HS (–14 V)±3-A peak output currentAbsolute maximum boot voltage 120 VLow current (7-µA) consumption when disabledIntegrated bootstrap diodeFunctional Safety-CapableDocumentation available to aid functional safety system designAEC-Q100 qualified with following resultsTemperature grade 1 (Tj= –40°C to 150°C)HBM ESD classification level 1BCDM ESD classification level C3Drives two N-channel MOSFETs in high-side low-side configuration5-V typical under voltage lockoutInput interlockEnable/disable functionality in DRC package16-ns typical propagation delay12-ns rise, 10-ns fall time with 1.8-nF load1-ns typical delay matchingAbsolute Maximum Negative Voltage Handling on Inputs (–5 V)Absolute Maximum Negative Voltage Handling on HS (–14 V)±3-A peak output currentAbsolute maximum boot voltage 120 VLow current (7-µA) consumption when disabledIntegrated bootstrap diodeFunctional Safety-CapableDocumentation available to aid functional safety system design

Description

The UCC27282 -Q1 is a robust N-channel MOSFET driver with a maximum switch node (HS) voltage rating of 100 V. It allows for two N-channel MOSFETs to be controlled in half-bridge or synchronous buck configuration based topologies. Its 3-A peak source and sink current along with low pull-up and pull-down resistance allows the UCC27282 -Q1 to drive large power MOSFETs with minimum switching losses during the transition of the MOSFET Miller plateau. Since the inputs are independent of the supply voltage, UCC27282 -Q1 can be used in conjunction with both analog and digital controllers. The input pins as well as the HS pin are able to tolerate significant negative voltage, which improves system robustness. Input interlock further improves robustness and system reliability in high noise applications. The enable and disable functionality provides additional system flexibility by reducing power consumption by the driver and responds to fault events within the system. 5-V UVLO allows systems to operate at lower bias voltages, which is necessary in many high frequency applications and improves system efficiency in certain operating modes. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Under voltage lockout (UVLO) is provided for both the high-side and low-side driver stages forcing the outputs low if the VDD voltage is below the specified threshold. An integrated bootstrap diode eliminates the need for an external discrete diode in many applications, which saves board space and reduces system cost. UCC27282 -Q1 is offered in a small package enabling high density designs. The UCC27282 -Q1 is a robust N-channel MOSFET driver with a maximum switch node (HS) voltage rating of 100 V. It allows for two N-channel MOSFETs to be controlled in half-bridge or synchronous buck configuration based topologies. Its 3-A peak source and sink current along with low pull-up and pull-down resistance allows the UCC27282 -Q1 to drive large power MOSFETs with minimum switching losses during the transition of the MOSFET Miller plateau. Since the inputs are independent of the supply voltage, UCC27282 -Q1 can be used in conjunction with both analog and digital controllers. The input pins as well as the HS pin are able to tolerate significant negative voltage, which improves system robustness. Input interlock further improves robustness and system reliability in high noise applications. The enable and disable functionality provides additional system flexibility by reducing power consumption by the driver and responds to fault events within the system. 5-V UVLO allows systems to operate at lower bias voltages, which is necessary in many high frequency applications and improves system efficiency in certain operating modes. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Under voltage lockout (UVLO) is provided for both the high-side and low-side driver stages forcing the outputs low if the VDD voltage is below the specified threshold. An integrated bootstrap diode eliminates the need for an external discrete diode in many applications, which saves board space and reduces system cost. UCC27282 -Q1 is offered in a small package enabling high density designs.