UCC21759 Series
Automotive 3.0kVrms, ±10A single-channel isolated gate driver w/ DESAT & internal clamp for IGBT/SiC
Manufacturer: Texas Instruments
Catalog(2 parts)
| Part | Current - Peak Output▲▼ | Qualification | Number of Channels▲▼ | Rise / Fall Time (Typ)▲▼ | Propagation Delay tpLH / tpHL (Max)▲▼ | Common Mode Transient Immunity (Min)▲▼ | Grade | Voltage - Output Supply▲▼ | Voltage - Output Supply▲▼ | Supplier Device Package | Pulse Width Distortion (Max)▲▼ | Current - Output High, Low▲▼ | Current - Output High, Low▲▼ | Package / Case | Approval Agency | Voltage - Isolation▲▼ | Mounting Type | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
10 A | AEC-Q100 | 1 ul | 2.7000000457633178e-8 s, 3.2999999177718564e-8 s | 9.000000034120603e-8 s | 149999992832 V/s | Automotive | 33 V | 13 V | 16-SOIC | 2.999999892949745e-8 s | 10 A | 10 A | 16-SOIC | UL, VDE | 3000 Vrms | Surface Mount | Capacitive Coupling | |
10 A | AEC-Q100 | 1 ul | 2.7000000457633178e-8 s, 3.2999999177718564e-8 s | 1.300000036508209e-7 s | 149999992832 V/s | Automotive | 33 V | 13 V | 16-SOIC | 2.999999892949745e-8 s | 10 A | 10 A | 16-SOIC | UL, VDE | 3000 Vrms | Surface Mount | Capacitive Coupling |
Key Features
• 3kVRMS single channel isolated gate driverAEC-Q100 qualified for automotive applicationsDevice temperature grade 1: -40°C to +125°C ambient operating temperature rangeDevice HBM ESD classification level 3ADevice CDM ESD classofication level C3Drives SiC MOSFETs and IGBTs up to 900Vpk33V maximum output drive voltage (VDD-VEE)High peak drive current and high CMTI±10A drive strength and split output150V/ns minimum CMTI200ns response time fast DESAT protection4A internal active Miller clamp400mA soft turn-off under fault conditionsIsolated analog sensor with PWM output forTemperature sensing with NTC, PTC or thermal diodeHigh voltage DC-Link or phase voltageAlarm FLT on over current and reset from RST/ENFast enable/disable response on RST/ENRejects <40ns noise transients and pulses on input pins12V VDD UVLO with power good on RDYInputs/outputs with over/under-shoot transient voltage immunity up to 5V130ns (maximum) propagation delay and 30ns (maximum) pulse/part skewSOIC-16 DW package with creepage and clearance distance > 8mmOperating junction temperature –40°C to +150°CSafety-related certifications:4242VPK basic isolation per EN IEC 60747-17 (VDE 0884-17)3kVRMS single channel isolated gate driverAEC-Q100 qualified for automotive applicationsDevice temperature grade 1: -40°C to +125°C ambient operating temperature rangeDevice HBM ESD classification level 3ADevice CDM ESD classofication level C3Drives SiC MOSFETs and IGBTs up to 900Vpk33V maximum output drive voltage (VDD-VEE)High peak drive current and high CMTI±10A drive strength and split output150V/ns minimum CMTI200ns response time fast DESAT protection4A internal active Miller clamp400mA soft turn-off under fault conditionsIsolated analog sensor with PWM output forTemperature sensing with NTC, PTC or thermal diodeHigh voltage DC-Link or phase voltageAlarm FLT on over current and reset from RST/ENFast enable/disable response on RST/ENRejects <40ns noise transients and pulses on input pins12V VDD UVLO with power good on RDYInputs/outputs with over/under-shoot transient voltage immunity up to 5V130ns (maximum) propagation delay and 30ns (maximum) pulse/part skewSOIC-16 DW package with creepage and clearance distance > 8mmOperating junction temperature –40°C to +150°CSafety-related certifications:4242VPK basic isolation per EN IEC 60747-17 (VDE 0884-17)
Description
AI
The UCC21759-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 900V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21759-Q1 has up to ±10A peak source and sink current.
The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 636VRMS working voltage with longer than 40 years isolation barrier life, 6kVPK surge immunity, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI).
The UCC21759-Q1 includes the state-of-art protection features, such as fast short circuit detection, fault reporting, active Miller clamp, and input and output side power supply UVLO optimized for SiC and IGBT power transistors. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.
The UCC21759-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 900V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21759-Q1 has up to ±10A peak source and sink current.
The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 636VRMS working voltage with longer than 40 years isolation barrier life, 6kVPK surge immunity, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI).
The UCC21759-Q1 includes the state-of-art protection features, such as fast short circuit detection, fault reporting, active Miller clamp, and input and output side power supply UVLO optimized for SiC and IGBT power transistors. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.