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P-Channel Enhancement Mode MOSFET
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P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET
| Part | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Technology | Package / Case | Package / Case [y] | Package / Case [x] | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | FET Type | Vgs(th) (Max) @ Id | Vgs (Max) | Mounting Type | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 2.5 W | 14 mOhm | 30.7 nC | MOSFET (Metal Oxide) | 8-SOIC | 3.9 mm | 0.154 in | 4.5 V 10 V | 8-SO | P-Channel | 2 V | 25 V | Surface Mount | 30 V | -55 °C | 150 °C | 1802 pF | 12 A |