DMP3020LSS-13

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Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 12A I(D), 30V, 0.014OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, GREEN, PLASTIC, SOP-8

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Active

Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 12A I(D), 30V, 0.014OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, GREEN, PLASTIC, SOP-8

Technical Specifications

Parameters and characteristics for this part

Specification	DMP3020LSS-13

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	30.7 nC
Input Capacitance (Ciss) (Max) @ Vds	1802 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	14 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	2 V

P-Channel Enhancement Mode MOSFET

Part	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Technology	Package / Case	Package / Case [y]	Package / Case [x]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	FET Type	Vgs(th) (Max) @ Id	Vgs (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C
Diodes Inc DMP3020LSS-13	2.5 W	14 mOhm	30.7 nC	MOSFET (Metal Oxide)	8-SOIC	3.9 mm	0.154 in	4.5 V 10 V	8-SO	P-Channel	2 V	25 V	Surface Mount	30 V	-55 °C	150 °C	1802 pF	12 A

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General part information

P-Channel Enhancement Mode MOSFET

Technical documentation and resources