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MOSFET N-CH 40V 40A 8TSON
| Part | Input Capacitance (Ciss) (Max) @ Vds | Technology | Package / Case | Mounting Type | Operating Temperature | FET Type | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package [y] | Supplier Device Package | Supplier Device Package [x] | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 2230 pF | MOSFET (Metal Oxide) | 8-PowerVDFN | Surface Mount | 175 °C | N-Channel | 3.8 mOhm | 100 W 840 mW | 35 nC | 4.5 V 10 V | 20 V | 2.5 V | 40 A | 3.1 | 8-TSON Advance-WF | 3.1 | 40 V |